SSM3K124TU 2014-03-01 1 toshiba field effect transistor silicon n channel mos type SSM3K124TU high speed switching applications ? 4 v drive ? low on-resistance: r on = 120 m ? (max) (@v gs = 4v) r on = 83 m ? (max) (@v gs = 10v) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain?source voltage v ds 30 v gate?source voltage v gss 20 v dc i d 2.4 drain current pulse i dp 4.8 a p d (note 1) 800 drain power dissipation p d (note 2) 500 mw channel temperature t ch 150 c storage temperature range t stg ?55 to 150 c note: using continuously under heavy l oads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decr ease in the reliability significantly even if the operating conditions (i .e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?h andling precautions?/?derating concept and methods?) and individual reliab ility data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on a ceramic board. (25.4 mm 25.4 mm 0.8 t, cu pad: 645 mm 2 ) note 2: mounted on an fr4 board. (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit drain?source breakdown voltage v (br) dss i d = 1 ma, v gs = 0 30 ? ? v drain cutoff current i dss v ds = 30 v, v gs = 0 ? ? 1 a gate leakage current i gss v gs = 20 v, v ds = 0 ? ? 1 a gate threshold voltage v th v ds = 5 v, i d = 1 ma 1.1 ? 2.6 v forward transfer admittance ? y fs ? v ds = 5 v, i d = 1.5 a (note3) 2.5 4.9 ? s i d = 1.5 a, v gs = 10 v (note3) ? 64 83 drain?source on-resistance r ds (on) i d = 1.0 a, v gs = 4 v (note3) ? 88 120 m input capacitance c iss v ds = 10 v, v gs = 0, f = 1 mhz ? 180 ? pf output capacitance c oss v ds = 10 v, v gs = 0, f = 1 mhz ? 100 ? pf reverse transfer capacitance c rss v ds = 10 v, v gs = 0, f = 1 mhz ? 38 ? pf turn-on time t on ? 13 ? switching time turn-off time t off v dd = 10 v, i d = 1.5 a, v gs = 0 to 4 v, r g = 10 ? 14 ? ns drain?source forward voltage v dsf i d = ? 2.4 a, v gs = 0 v (note3) ? ? 0.9 ? 1.25 v note3: pulse test unit: mm jedec D jeita D toshiba 2-2u1a weight: 6.6 mg (typ.) 1: gate 2: source 3: drain ufm -0.05 1.70.1 2.10.1 0.650.05 1 2 2.00.1 3 0.70.05 +0.1 0.3 0.1660.05 start of commercial production 2006-01
SSM3K124TU 2014-03-01 2 switching time test circuit (a) test circuit (b) v in marking equivalent circuit (top view) precaution v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = 1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing , and containers and other objects that come into direct contact with devices should be made of antistatic materials. (c) v out v dd = 10 v r g = 10 duty 1% v in : t r , t f < 5 ns common source ta = 25c v dd out in 4 v 0 10 s r g t f t on 90% 10% 4 v 0 v 10% 90% t off t r v dd v ds ( on ) kke 1 2 3 1 2 3
SSM3K124TU 2014-03-01 3 vgs = 4.0 i d ? v ds 0 4 0 0.2 0.4 0.6 1 3 vgs = 3.3v 3.6v 10 v 1 2 4 v 6v 0.8 5 r ds (on) ? ta 500 0 ? 50 i d = 1.0a / v gs = 4.0 v 0 50 150 100 200 300 400 100 r ds (on) ? i d 0 2 6 8 4 0 100 200 300 r ds (on) ? v gs 25 c ta = 100 c ? 25 c 250 150 50 1.5 a / 10v 10 i d ? v gs 10 0 0.1 1 0.001 0.01 0.0001 4.0 0.5 1.5 ? 25 c ta = 100 c 25 c 1.0 3.5 3.0 2.5 2.0 v th ? ta 2.0 0 ? 50 0 150 0.5 1.0 1.5 50 100 0 1 3 4 2 0 100 200 300 250 150 50 5 10v drain?source voltage v ds (v) drain current i d (a) gate?source voltage v gs (v) drain current i d (a) common source v ds = 5 v common source ta = 25c i d = 1.5 a common source drain current i d (a) drain?source on-resistance r ds (on) (m
) gate?source voltage v gs (v) drain?source on-resistance r ds (on) (m
) common source ta = 25c ambient temperature ta (c) gate threshold voltage v th (v) ambient temperature ta (c) drain?source on-resistance r ds (on) (m
) common source common source v ds = 5 v i d = 1 ma
SSM3K124TU 2014-03-01 4 t f common source v gs = 0 v ta = 25c t ? i d 1 0.01 100 0.1 600 1 10 t off 10 t on t r i dr ? v ds |y fs | ? i d 0.1 10 1 10 0.1 1 3 0.3 c ? v ds 10 0.1 1 10 100 100 1000 300 500 30 50 c iss c oss c rss 0.01 g d s i dr 10 0 0.1 1 0.001 0.01 0.0001 ?0.2 ?0.6 ?0.4 ?1.0 ?0.8 ?1.2 ? 25 c ta = 100 c 25 c drain reverse current i dr (a) drain?source voltage v ds (v) drain current i d (a) forward transfer admittance ? y fs ? (s) common source v ds = 5 v ta = 25c switching time t (ns) drain current i d (a) drain?source voltage v ds (v) capacitance c (pf) p d ? t a 800 0 200 120 b 100 140 400 600 160 1000 80 60 40 20 0 ?20 ?40 a transient thermal impedance rth (c/w) pulse width t w (s) t ? i d 1 100 600 10 0.001 0.01 0.1 600 b c a 1 10 100 a : mounted on an fr4 board (25.4 x 25.4 x 1.6 mm cu pad : 645 mm 2 ) b : mounted on a ceramic board ( 25.4 x 25.4 x 0.8 mm cu pad : 645 mm 2 ) ambient temperature ta (c) drain power dissipation p d (mw) a : mounted on a ceramic board (25.4 x 25.4 x 0.8 mm cu pad : 645 mm 2 ) b : mounted on an fr4 board (25.4 x 25.4 x 1.6 mm cu pad : 645 mm 2 ) c : mounted on an fr4 board (25.4 x 25.4 x 1.6 mm cu pad : 0.36 mm 2 x 3) common source ta = 25c f = 1 mhz v gs = 0 v common source v dd = 10 v v gs = 0 to 4 v ta = 25c r g = 10
SSM3K124TU 2014-03-01 5 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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